GaN Technology Director

We're looking for a candidate to fill this position in an exciting company.

• Lead assigned NPI and Technology Development: 
• Adhere to the protocols set out in the company’s NPI and R&D Phase Gate System (NOVA).
• Collaborate with all relevant groups in the company to ensure program success.
• Establish and achieve set performance goals for new technologies.
• Set and adhere to budgets (financial and time).
• Communicate progress against project goals and objectives to various groups within the company (including the Executive Management Board) in established forums.
• Technical Point of Contact for all CSC GaN work run by the company staff.
  
• Contract R&D
• Technical management of contract R&D and government funded programs.
• Serve as Principal Investigator for all government programmes.  This includes authoring required reports and delivering them on time.
• Networking within the EU GaN community to ensure that the company maintains its reputation and is the first choice for government funded work.
• Intellectual Property
  
• Review and advise on patent landscapes as assigned.
• Develop novel ideas and work with the company legal counsel and Sr. Director of New Technology to file new patents.

• An advanced degree (M.S. or Ph.D.) in a relevant science or engineering discipline
• Extensive materials engineering experience in GaN or related materials
• A firm understanding of III-N growth by MBE and MOVPE
• An advanced understanding of the theory of semiconductor device operation relevant to III-N devices
• A fluent understanding of how growth impacts device performance
• The ability to accurately analyze data and draw appropriate conclusions
• The communication skills necessary for effective interaction with internal employees and external customers